EETOP 创芯网论坛

找回密码

  登录   注册  

搜帖子
电子资料:5G承载光模块测试方案介绍 |有奖下载: 300信元+27个幸运抽奖)
查看: 2029|回复: 3
打印 上一主题 下一主题

[资料] MOSFET Modeling for VLSI Simulation Theory And Practice

[复制链接]
跳转到指定楼层
1#
发表于 2015-12-16 22:33:25 | 只看该作者 回帖奖励 |倒序浏览 |阅读模式

马上注册,结交更多好友,享用更多功能,让你轻松玩转社区。

您需要 登录 才可以下载或查看,没有帐号?注册

x
本帖最后由 oponderz 于 2015-12-18 21:22 编辑

The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.

Contents:
•Overview
•Review of Basic Semiconductor and pn Junction Theory
•MOS Transistor Structure and Operation
•MOS Capacitor
•Threshold Voltage
•MOSFET DC Model
•Dynamic Model
•Modeling Hot-Carrier Effects
•Data Acquisition and Model Parameter Measurements
•Model Parameter Extraction Using Optimization Method
•SPICE Diode and MOSFET Models and Their Parameters
•Statistical Modeling and Worst-Case Design Parameters
2#
发表于 2015-12-17 18:24:32 | 只看该作者
When is it going to be uploaded?
3#
 楼主| 发表于 2015-12-18 21:17:15 | 只看该作者
本帖最后由 oponderz 于 2015-12-18 22:21 编辑

回复 1# oponderz



Sorry, the filename was too long, cause the upload failure.
I already brought up another topic, please check for the same name.
4#
发表于 2015-12-25 14:59:07 | 只看该作者
where's the book???????????????
您需要登录后才可以回帖 登录 | 注册

本版积分规则

关闭

站长推荐上一条 /3 下一条

小黑屋| 关于我们| 联系我们| 在线咨询 |  EETOP 创芯网 ( )

GMT+8, 2020-3-28 04:32 , Processed in 0.095333 second(s), 10 queries , Gzip On, Redis On.

Powered by X3.4

© 2001-2017

快速回复 返回顶部 返回列表
快赢彩票 卓易彩票 国丰彩票 山东11选5开奖 瑞祥彩票